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Ultrasensitive 2D Bi2O2Se Phototransistors on Silicon Substrates

Published on: 01-Oct-2018

Summary of the article:
First, large-area Bi2O2Se was prepared by chemical vapor deposition on mica substrate. Through developing a polystyrene (PS)-H2O assisted method, the CVD-grown high-quality Bi2O2Se is successfully transferred from mica onto silicon substrate. Compared with the inevitable etching effect in the conventional PMMA-HF assisted method, this new method maintains high quality of Bi2O2Se, which was verified by high mobility (107 cm2V-1s-1) and photoresponse performance (3.5×104 AW-1) on silicon substrate. On silicon substrate, under the assistance of intrinsic back gating, the dark current of Bi2O2Se was lowered to only few pA, which yields high on/off ratio (107) and specific detectivity (9.0×1013 Jones). The high performance of the phototransistor together with the developed unique transfer technique are promising for the development of novel 2D material based optoelectronic applications, as well as integrating with state-of-the-art silicon photonic and electronic technologies.

Qundong Fu, Chao Zhu, Xiaoxu Zhao, Xingli Wang, Apoorva Chaturvedi, Chao Zhu, Xiaowei Wang, Qingsheng Zeng, Jiadong Zhou, Fucai Liu*, Tay Beng Kang, Hua Zhang, Stephen. Pennycook*, and Zheng Liu*. Ultrasensitive Phototransistor Based on 2D Bi2O2Se on Silicon Substrates, Adv. Mater., 2018.

Collaboration if any:
Dr. Xiaoxu Zhao, Prof. Stephen. Pennycook
National University of Singapore, Department of Materials Science and Engineering, 9 Engineering Drive 1, Singapore 117575, Singapore
Dr. Xingli Wang, Dr. Zheng Liu, Prof. Beng Kang Tay
CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Singapore 637553, Singapore
Dr. Fucai Liu
School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China.

NRF-RF2013-08, Tier 2 MOE2016-T2-2-153, MOE2015-T2-2-007, Tier 1 RG164/15, Tier 1 RG4/17.

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